1N6792 1N6792r 45 volts 25 amps features tungsten/platinum schottky barrier for very low vf oxide passivated structure for very low leakage currents guard ring protection for increased reverse energy capability epitaxial structure minimizes forward voltage drop hermetically sealed, low profile ceramic surface mount power package low package inductance very low thermal resistance available as standard polarity (strap-to-anode, 1N6792) and reverse polarity (strap-to-cathode: 1N6792r) description symbol max. unit peak repetitive reverse voltage v rrm 45 volts working peak reverse voltage v rwm 45 volts dc blocking voltage v r 45 volts average rectified forward current, tc 145 c i f( ave ) 25 amps derating, forward current, tc 3 145 c di f / dt (3.3) amps/ c nonrepetitive peak surge current, tp= 8.3 ms, half- sinewave i fsm 125 amps peak repetitive reverse surge current, tp= 1 m s, f= 1khz i rrm 2 amp junction temperature range t j -65 to +175 c storage temperature range t st g -65 to +175 c thermal resistance, junction to case: 1N6792 1N6792r q jc 1.25 tbd c/w maximum ratings @ 25 c (unless otherwise specified) mechanical outline thinkey?2 datasheet# msc0 329 a 2830 s. fairview st. santa ana, ca 92704 ph: (714) 979-8220 fax: (714) 966-5256 low voltage drop schottky diode
description symbol conditions min typ. max unit reverse (leakage) ir 25 vr= 45 vdc, tc= 25 c 300 1000 m a current ir 125 vr= 45 vdc, tc= 125 c 100 150 ma forward voltage vf1 if= 5a, tc= 25 c 375 475 mv pulse test, vf2 if= 10a, tc= 25 c 430 520 mv pw= 300 m s vf3 if= 20a, tc= 25 c 510 610 mv d/c 2% vf4 if= 50a, tc= 25 c 740 mv vf5 if= 10a, tc= -55 c 480 580 mv vf6 if= 10a, tc= 125 c 360 mv junction capacitance cj1 vr= 10 vdc 525 600 pf cj2 vr= 5 vdc 725 pf breakdown voltage bvr ir= 1 ma, tc= 25 c 55 v ir= 1 ma, tc= -55 c 45 50 v electrical parameters 1N6792 1N6792r datasheet# msc0291a
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